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| HF125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF125-28 is Designed for PACKAGE STYLE .500 4L FLG .112x45 A FULL R L FEATURES: * PG = 15 dB min. at 100 W/30 MHz * IMD3 = -30 dBc max. at 100 W(PEP) * OmnigoldTM Metalization System C B E C O.125 NOM. B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG JC 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 0.65 OC/W O O DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10608 CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO BV EBO ICES hFE Cob GP IMD3 IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 15 UNITS V V V mA --pF dB -30 dBc IC = 5.0 A f = 1.0 MHz PIN = 3.95 W ICQ = 100 mA f = 30 MHz f = 30 MHz 10 --15 250 16 -34 200 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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